By Norman G. Einspruch,Norman Einspruch
Comprised of 8 chapters, this quantity starts off with a normal photo of MOS expertise improvement from the equipment and processing issues of view. The serious factor of hot-carrier results is mentioned, in addition to the equipment engineering facets of this challenge; the rising low-temperature MOS know-how; and the matter of latchup in scaled MOS circuits. numerous gadget types which are compatible to be used in circuit simulators also are defined. The final bankruptcy examines novel electron shipping results saw in ultra-small MOS constructions.
This publication should still end up priceless to semiconductor engineers occupied with varied points of MOS know-how improvement, in addition to for researchers during this box and scholars of the corresponding disciplines.
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Advanced MOS Device Physics: 18 (V L S I Electronics) by Norman G. Einspruch,Norman Einspruch